Integrated Assemblies, and Methods of Forming Integrated Assemblies

ABSTRACT

Some embodiments include a method of forming an integrated assembly. Laterally alternating first and second sacrificial materials are formed over a conductive structure, and then a stack of vertically alternating first and second levels is formed over the sacrificial materials. The first levels include first material and the second levels include insulative second material. Channel-material-openings are formed to extend through the stack and through at least some of the strips. Channel-material-pillars are formed within the channel-material-openings. Slits are formed to extend through the stack and through the sacrificial materials. The first sacrificial material is replaced with first conductive material and then the second sacrificial material is replaced with second conductive material. At least some of the first material of the stack is replaced with third conductive material. Some embodiments include integrated assemblies.

RELATED PATENT DATA

This application claims priority to and the benefit of U.S. ProvisionalPatent Application Ser. No. 63/072,061, filed Aug. 28, 2020, thedisclosure of which is incorporated herein by reference.

TECHNICAL FIELD

Methods of forming integrated assemblies (e.g., integrated memorydevices). Integrated assemblies.

BACKGROUND

Memory provides data storage for electronic systems. Flash memory is onetype of memory, and has numerous uses in modern computers and devices.For instance, modern personal computers may have BIOS stored on a flashmemory chip. As another example, it is becoming increasingly common forcomputers and other devices to utilize flash memory in solid statedrives to replace conventional hard drives. As yet another example,flash memory is popular in wireless electronic devices because itenables manufacturers to support new communication protocols as theybecome standardized, and to provide the ability to remotely upgrade thedevices for enhanced features.

NAND may be a basic architecture of flash memory, and may be configuredto comprise vertically-stacked memory cells.

Before describing NAND specifically, it may be helpful to more generallydescribe the relationship of a memory array within an integratedarrangement. FIG. 1 shows a block diagram of a prior art device 1000which includes a memory array 1002 having a plurality of memory cells1003 arranged in rows and columns along with access lines 1004 (e.g.,wordlines to conduct signals WL0 through WLm) and first data lines 1006(e.g., bitlines to conduct signals BL0 through BLn). Access lines 1004and first data lines 1006 may be used to transfer information to andfrom the memory cells 1003. A row decoder 1007 and a column decoder 1008decode address signals A0 through AX on address lines 1009 to determinewhich ones of the memory cells 1003 are to be accessed. A senseamplifier circuit 1015 operates to determine the values of informationread from the memory cells 1003. An I/O circuit 1017 transfers values ofinformation between the memory array 1002 and input/output (I/O) lines1005. Signals DQ0 through DQN on the I/O lines 1005 can represent valuesof information read from or to be written into the memory cells 1003.Other devices can communicate with the device 1000 through the I/O lines1005, the address lines 1009, or the control lines 1020. A memorycontrol unit 1018 is used to control memory operations to be performedon the memory cells 1003, and utilizes signals on the control lines1020. The device 1000 can receive supply voltage signals Vcc and Vss ona first supply line 1030 and a second supply line 1032, respectively.The device 1000 includes a select circuit 1040 and an input/output (I/O)circuit 1017. The select circuit 1040 can respond, via the I/O circuit1017, to signals CSEL1 through CSELn to select signals on the first datalines 1006 and the second data lines 1013 that can represent the valuesof information to be read from or to be programmed into the memory cells1003. The column decoder 1008 can selectively activate the CSEL1 throughCSELn signals based on the AO through AX address signals on the addresslines 1009. The select circuit 1040 can select the signals on the firstdata lines 1006 and the second data lines 1013 to provide communicationbetween the memory array 1002 and the I/O circuit 1017 during read andprogramming operations.

The memory array 1002 of FIG. 1 may be a NAND memory array, and FIG. 2shows a schematic diagram of a three-dimensional NAND memory device 200which may be utilized for the memory array 1002 of FIG. 1. The device200 comprises a plurality of strings of charge-storage devices. In afirst direction (Z-Z′), each string of charge-storage devices maycomprise, for example, thirty-two charge-storage devices stacked overone another with each charge-storage device corresponding to one of, forexample, thirty-two tiers (e.g., Tier0-Tier31). The charge-storagedevices of a respective string may share a common channel region, suchas one formed in a respective pillar of semiconductor material (e.g.,polysilicon) about which the string of charge-storage devices is formed.In a second direction (X-X′), each first group of, for example, sixteenfirst groups of the plurality of strings may comprise, for example,eight strings sharing a plurality (e.g., thirty-two) of access lines(i.e., “global control gate (CG) lines”, also known as wordlines, WLs).Each of the access lines may couple the charge-storage devices within atier. The charge-storage devices coupled by the same access line (andthus corresponding to the same tier) may be logically grouped into, forexample, two pages, such as P0/P32, P1/P33, P2/P34 and so on, when eachcharge-storage device comprises a cell capable of storing two bits ofinformation. In a third direction (Y-Y′), each second group of, forexample, eight second groups of the plurality of strings, may comprisesixteen strings coupled by a corresponding one of eight data lines. Thesize of a memory block may comprise 1,024 pages and total about 16 MB(e.g., 16 WLs×32 tiers×2 bits=1,024 pages/block, block size=1,024pages×16 KB/page=16 MB). The number of the strings, tiers, access lines,data lines, first groups, second groups and/or pages may be greater orsmaller than those shown in FIG. 2.

FIG. 3 shows a cross-sectional view of a memory block 300 of the 3D NANDmemory device 200 of FIG. 2 in an X-X′ direction, including fifteenstrings of charge-storage devices in one of the sixteen first groups ofstrings described with respect to FIG. 2. The plurality of strings ofthe memory block 300 may be grouped into a plurality of subsets 310,320, 330 (e.g., tile columns), such as tile column_(I), tile column_(j)and tile column_(K), with each subset (e.g., tile column) comprising a“partial block” (sub-block) of the memory block 300. A global drain-sideselect gate (SGD) line 340 may be coupled to the SGDs of the pluralityof strings. For example, the global SGD line 340 may be coupled to aplurality (e.g., three) of sub-SGD lines 342, 344, 346 with each sub-SGDline corresponding to a respective subset (e.g., tile column), via acorresponding one of a plurality (e.g., three) of sub-SGD drivers 332,334, 336. Each of the sub-SGD drivers 332, 334, 336 may concurrentlycouple or cut off the SGDs of the strings of a corresponding partialblock (e.g., tile column) independently of those of other partialblocks. A global source-side select gate (SGS) line 360 may be coupledto the SGSs of the plurality of strings. For example, the global SGSline 360 may be coupled to a plurality of sub-SGS lines 362, 364, 366with each sub-SGS line corresponding to the respective subset (e.g.,tile column), via a corresponding one of a plurality of sub-SGS drivers322, 324, 326. Each of the sub-SGS drivers 322, 324, 326 mayconcurrently couple or cut off the SGSs of the strings of acorresponding partial block (e.g., tile column) independently of thoseof other partial blocks. A global access line (e.g., a global CG line)350 may couple the charge-storage devices corresponding to therespective tier of each of the plurality of strings. Each global CG line(e.g., the global CG line 350) may be coupled to a plurality ofsub-access lines (e.g., sub-CG lines) 352, 354, 356 via a correspondingone of a plurality of sub-string drivers 312, 314 and 316. Each of thesub-string drivers may concurrently couple or cut off the charge-storagedevices corresponding to the respective partial block and/or tierindependently of those of other partial blocks and/or other tiers. Thecharge-storage devices corresponding to the respective subset (e.g.,partial block) and the respective tier may comprise a “partial tier”(e.g., a single “tile”) of charge-storage devices. The stringscorresponding to the respective subset (e.g., partial block) may becoupled to a corresponding one of sub-sources 372, 374 and 376 (e.g.,“tile source”) with each sub-source being coupled to a respective powersource.

The NAND memory device 200 is alternatively described with reference toa schematic illustration of FIG. 4.

The memory array 200 includes wordlines 202 ₁ to 202 _(N), and bitlines228 ₁ to 228 _(M).

The memory array 200 also includes NAND strings 206 ₁ to 206 _(M). EachNAND string includes charge-storage transistors 208 ₁ to 208 _(N). Thecharge-storage transistors may use floating gate material (e.g.,polysilicon) to store charge, or may use charge-trapping material (suchas, for example, silicon nitride, metallic nanodots, etc.) to storecharge.

The charge-storage transistors 208 are located at intersections ofwordlines 202 and strings 206. The charge-storage transistors 208represent non-volatile memory cells for storage of data. Thecharge-storage transistors 208 of each NAND string 206 are connected inseries source-to-drain between a source-select device (e.g., source-sideselect gate, SGS) 210 and a drain-select device (e.g., drain-side selectgate, SGD) 212. Each source-select device 210 is located at anintersection of a string 206 and a source-select line 214, while eachdrain-select device 212 is located at an intersection of a string 206and a drain-select line 215. The select devices 210 and 212 may be anysuitable access devices, and are generically illustrated with boxes inFIG. 4.

A source of each source-select device 210 is connected to a commonsource line 216. The drain of each source-select device 210 is connectedto the source of the first charge-storage transistor 208 of thecorresponding NAND string 206. For example, the drain of source-selectdevice 210 ₁ is connected to the source of charge-storage transistor 208₁ of the corresponding NAND string 206 ₁. The source-select devices 210are connected to source-select line 214.

The drain of each drain-select device 212 is connected to a bitline(i.e., digit line) 228 at a drain contact. For example, the drain ofdrain-select device 2121 is connected to the bitline 228 ₁. The sourceof each drain-select device 212 is connected to the drain of the lastcharge-storage transistor 208 of the corresponding NAND string 206. Forexample, the source of drain-select device 212 ₁ is connected to thedrain of charge-storage transistor 208 _(N) of the corresponding NANDstring 206 ₁.

The charge-storage transistors 208 include a source 230, a drain 232, acharge-storage region 234, and a control gate 236. The charge-storagetransistors 208 have their control gates 236 coupled to a wordline 202.A column of the charge-storage transistors 208 are those transistorswithin a NAND string 206 coupled to a given bitline 228. A row of thecharge-storage transistors 208 are those transistors commonly coupled toa given wordline 202.

The vertically-stacked memory cells of three-dimensional NANDarchitecture may be block-erased by generating hole carriers beneaththem, and then utilizing an electric field to sweep the hole carriersupwardly along the memory cells.

Gating structures of transistors may be utilized to provide gate-induceddrain leakage (GIDL) which generates the holes utilized for block-eraseof the memory cells. The transistors may be the source-side select (SGS)devices described above. The channel material associated with a stringof memory cells may be configured as a channel-material-pillar, and aregion of such pillar may be gatedly coupled with an SGS device. Thegatedly-coupled portion of the channel-material-pillar is a portion thatoverlaps a gate of the SGS device.

It can be desired that at least some of the gatedly-coupled portion ofthe channel-material-pillar be heavily doped. In some applications itcan be desired that the gatedly-coupled portion include both aheavily-doped lower region and a lightly-doped upper region; with bothregions overlapping the gate of the SGS device. Specifically, overlapwith the lightly-doped region provides a non-leaky “OFF” characteristicfor the SGS device, and overlap with the heavily-doped region providesleaky GIDL characteristics for the SGS device. The terms “heavily-doped”and “lightly-doped” are utilized in relation to one another rather thanrelative to specific conventional meanings. Accordingly, a“heavily-doped” region is more heavily doped than an adjacent“lightly-doped” region, and may or may not comprise heavy doping in aconventional sense. Similarly, the “lightly-doped” region is lessheavily doped than the adjacent “heavily-doped” region, and may or maynot comprise light doping in a conventional sense. In some applications,the term “lightly-doped” refers to semiconductor material having lessthan or equal to about 10¹⁸ atoms/cm³ of dopant, and the term“heavily-doped” refers to semiconductor material having greater than orequal to about 10²² atoms/cm³ of dopant.

The channel material may be initially doped to the lightly-doped level,and then the heavily-doped region may be formed by out-diffusion from anadjacent doped semiconductor material.

It is desired to develop new methods of forming memory devices, and todevelop new memory devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram of a prior art memory device having amemory array with memory cells.

FIG. 2 shows a schematic diagram of the prior art memory device of FIG.1 in the form of a 3D NAND memory device.

FIG. 3 shows a cross-sectional view of the prior art 3D NAND memorydevice of FIG. 2 in an X-X′ direction.

FIG. 4 is a schematic diagram of a prior art NAND memory array.

FIGS. 5-16 are diagrammatic top-down views of an example integratedassembly at example sequential process stages of an example embodimentmethod for forming an example memory device.

FIGS. 5A-16A are diagrammatic cross-sectional side views along the linesA-A of FIGS. 5-16, respectively.

FIGS. 5A-1 and 16A-1 are diagrammatic cross-sectional side views ofexample embodiments alternative to those of FIGS. 5A and 16A,respectively.

FIGS. 5B-16B are diagrammatic cross-sectional side views along the linesB-B of FIGS. 5-16, respectively.

FIGS. 11C-14C are diagrammatic cross-sectional top-down views along thelines C-C of FIGS. 11A-14A, respectively; and along the lines C-C ofFIGS. 11B-14B, respectively.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Some embodiments include methods of using two different sacrificialmaterials to support a stack of alternating first and second levels.Channel-material-pillars are formed to extend through the stack andthrough the sacrificial materials. Subsequently, the first and secondsacrificial materials are sequentially replaced with first and secondconductive materials, respectively. The first and second conductivematerials may or may not be compositionally the same as one another. Thefirst and second conductive materials are incorporated into a sourcestructure.

Example embodiments are described with reference to FIGS. 5-16. FIGS.5-16 describe example sequential steps of an example method, with FIG.16 showing an example structure which may be formed by the examplemethod.

Referring to FIGS. 5-5B, an example integrated assembly 10 includes alayer 12 over a conductive expanse 14, and includes alternating strips16 and 18 over the layer 12.

The conductive expanse 14 may be supported by an underlyingsemiconductor base (not shown). The base may comprise semiconductormaterial; and may, for example, comprise, consist essentially of, orconsist of monocrystalline silicon. The base may be referred to as asemiconductor substrate. The term “semiconductor substrate” means anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials, such as a semiconductivewafer (either alone or in assemblies comprising other materials), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductor substratesdescribed above.

The conductive expanse 14 comprises conductive material 20. Theconductive material 20 may comprise any suitable electrically conductivecomposition(s); such as, for example, one or more of various metals(e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.),metal-containing compositions (e.g., metal silicide, metal nitride,metal carbide, etc.), and/or conductively-doped semiconductor materials(e.g., conductively-doped silicon, conductively-doped germanium, etc.).In some embodiments, the conductive material 20 may comprisemetal-containing material, such as, for example, one or more of variousmetals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium,etc.) and/or metal-containing compositions (e.g., metal silicide, metalnitride, metal carbide, etc.). In some embodiments, the conductivematerial 20 may comprise, consist essentially of, or consist of WSi,where the chemical formula indicates primary constituents rather than aspecific stoichiometry. The WSi may be alternatively referred to asWSix, where x is a number greater than zero.

The layer 12 comprises a material 22. In some embodiments, the material22 may comprise conductively-doped (e.g., heavily-doped) semiconductormaterial. The semiconductor material may comprise any suitablecomposition(s); and in some embodiments may comprise, consistessentially of, or consist of one or more of silicon, germanium, III/Vsemiconductor material (e.g., gallium phosphide), semiconductor oxide,etc.; with the term III/V semiconductor material referring tosemiconductor materials comprising elements selected from groups III andV of the periodic table (with groups III and V being old nomenclature,and now being referred to as groups 13 and 15). In some embodiments, thematerial 22 may comprise doped silicon.

The layer 12 may be formed to any suitable vertical thickness. Forinstance, in some embodiments the layer 12 may be formed to a thicknesswithin a range of from about 10 nanometers (nm) to about 20 nm, within arange of from about 10 nm to about 50 nm, etc. The layer 12 may beomitted in some embodiments.

The strips 16 and 18 comprise materials 24 and 26, respectively. In someembodiments, the strips 16 and 18 may be referred to as first and secondstrips, respectively, and the materials 24 and 26 may be referred to asfirst and second materials, respectively. The materials 24 and 26 areeventually removed and replaced with other materials, and accordinglymay be referred to as sacrificial materials. In some embodiments, thematerials 24 and 26 may be referred to as a first sacrificial materialand a second sacrificial material, respectively.

The materials 24 and 26 may comprise any suitable compositions, and areselectively removable relative to one another, and relative to thematerials of the layer 12 and the expanse 14. In some embodiments, thematerial 24 may comprise, consist essentially of, or consist of silicondioxide; and the material 26 may comprise, consist essentially of, orconsist of silicon nitride.

The strips 16 and 18 extend along a first horizontal direction (anillustrated x-axis direction), and alternate with one another along asecond horizontal direction (an illustrated y-axis direction). In someembodiments, the strips 16 and 18 may be considered to laterallyalternate with one another. Although the strips 16 and 18 are shown tobe straight along the x-axis direction, in other embodiments the stripsmay be curved, wavy, etc.

The embodiment of FIG. 5A shows the strips 16 and 18 to be about thesame lateral thickness as one another. In other embodiments, the strips16 and 18 may be different lateral thicknesses relative to one another.For instance, FIG. 5A-1 shows an example embodiment analogous to that ofFIG. 5A, but in which the strips 16 and 18 have different lateralthicknesses relative to one another.

The alternating strips 16 and 18 may be formed with any suitablemethodology. For instance, in some embodiments one of the materials 24and 26 may be formed and patterned into strips which are spaced from oneanother by gaps (trenches), and then the other of the materials 24 and26 may be formed within the trenches.

A planarized surface 25 is formed to extend across the materials 24 and26. The planarized surface may be formed with any suitable processing,including, for example, chemical-mechanical polishing (CMP).

The materials 24 and 26 may have any suitable vertical thickness. Insome embodiments, such vertical thickness may be within a range of fromabout 10 nm to about 50 nm, within a range of from about 10 nm to about100 nm, etc.

Referring to FIGS. 6-6B, a layer 28 is formed over the alternatingstrips 16 and 18, and specifically is formed on the planarized surface25. The layer 28 comprises a material 30. The material 30 may beconductive, and may, for example, comprise conductively-dopedsemiconductor material. In some embodiments, the material 30 of thelayer 28 may be identical to the material 22 of the layer 12. In otherembodiments, the material 30 of the layer 28 may be compositionallydifferent relative to material 22 of the layer 12. In some embodiments,the layer 28 may be insulative (e.g., the material 30 may comprisealuminum oxide, hafnium oxide, etc.).

The layer 28 may be referred to as a second layer to distinguish it fromthe first layer 12. The layer 28 may be formed to a same verticalthickness as a layer 12, or may be formed to a different verticalthickness than the layer 12. In some embodiments, the layer 28 may beformed to a thickness within a range of from about 10 nm to about 20 nm,within a range of from about 10 nm to about 50 nm, etc. The layer 28 maybe omitted in some embodiments.

A stack 32 of alternating first and second levels (tiers) 34 and 36 isformed over the layer 28. The stack 32 may comprise any suitable numberof alternating levels 34 and 36. The levels 34 ultimately becomeconductive levels of a memory arrangement. There may be any suitablenumber of the levels 34 to form the desired number of conductive levels.In some embodiments, there may be at least 8, 16, 32, 64, etc., of thelevels 34.

The first levels 34 comprise a first material 38. Such first materialmay comprise any suitable composition(s), and in some embodiments maycomprise, consist essentially of, or consist of silicon nitride. Thematerial 38 is subsequently removed and replaced with other materials,and accordingly may be referred to as a sacrificial material.

The second levels 36 comprise an insulative second material 40, and maybe referred to as insulative second levels. The material 40 may compriseany suitable composition(s). In some embodiments, the material 40 maycomprise, consist essentially of, or consist of silicon dioxide.

The levels 34 and 36 may be of any suitable thicknesses; and may be thesame thickness as one another, or may be different thicknesses relativeto one another. In some embodiments, the levels 34 and 36 may havevertical thicknesses within a range of from about 10 nm to about 400 nm.

Referring to FIGS. 7-7B, openings (first openings,cell-material-openings) 42 are formed to extend through the stack 32 andthrough at least some of the strips 16 and 18 to an upper surface of theconductive material 20. The openings 42 may be formed in atightly-packed arrangement, such as, for example, ahexagonal-close-packed (HCP) arrangement. The openings 42 may or may notpenetrate into the conductive material 20.

The openings 42 have sidewall surfaces which extend along the materials38 and 40 of the stack 32. In the shown embodiment, such sidewallsurfaces are substantially vertically straight, with the term“substantially vertically straight” meaning vertically straight towithin reasonable tolerances of fabrication and measurement. In otherembodiments, the sidewall surfaces of the openings 42 may be tapered.

Referring to FIGS. 8-8B, cell-material-pillars 44 are formed within theopenings 42 (FIGS. 7-7B). Each of the pillars 44 includes semiconductormaterial (channel material) 46, dielectric material 48 on one side ofthe semiconductor material 46, and a region 50 on an opposing side ofthe semiconductor material 46. The semiconductor material 46 is shownwith stippling to assist the reader in identifying such material.

The semiconductor material 46 may comprise any suitable composition(s);and in some embodiments may comprise, consist essentially of, or consistof one or more of silicon, germanium, III/V semiconductor material(e.g., gallium phosphide), semiconductor oxide (e.g., indium galliumzinc oxide), etc. In some embodiments, the semiconductor material 46 maycomprise, consist essentially of, or consist of appropriately-dopedsilicon. The semiconductor material (channel material) 46 formschannel-material-pillars 52.

In the illustrated embodiment, the channel-material-pillars 52 areconfigured as annular rings (as shown in a top-down view of FIG. 8),with such annular rings surrounding the insulative material 48. Suchconfiguration of the channel-material-pillars may be considered tocorrespond to a “hollow” channel configuration, with the dielectricmaterial 48 being provided within the hollows of thechannel-material-pillars. In other embodiments, the channel material maybe configured as solid pillars, rather than being configured as theillustrated hollow pillars.

The insulative material 48 may comprise any suitable composition(s), andin some embodiments may comprise, consist essentially of, or consist ofsilicon dioxide.

The regions 50 comprise one or more cell materials (memory cellmaterials), with such cell materials typically being formed within theopenings 42 (FIGS. 7-7B) prior to the channel material 46. The cellmaterials of the regions 50 may comprise tunneling material,charge-storage material and charge-blocking material. The tunnelingmaterial (also referred to as gate-dielectric material) may comprise anysuitable composition(s); and in some embodiments may comprise one ormore of silicon dioxide, aluminum oxide, hafnium oxide, zirconium oxide,etc. The charge-storage material may comprise any suitablecomposition(s); and in some embodiments may comprise charge-trappingmaterial (e.g., one or more of silicon nitride, silicon oxynitride,conductive nanodots, etc.). The charge-blocking material may compriseany suitable composition(s); and in some embodiments may comprise one ormore of silicon dioxide, aluminum oxide, hafnium oxide, zirconium oxide,etc.

In some embodiments, the channel material 46 may be referred to as afirst cell material, and the cell materials within the regions 50 may bereferred to as additional cell materials.

Referring to FIGS. 9-9B, slits (second openings) 54 are formed to passthrough the stack 32, through the materials 24 and 26 of the strips 16and 18, and to the conductive expanse 14. The slits 54 may or may notpenetrate into the material 20 of the conductive expanse 14.

In some embodiments, the first openings 42 are cylindrical openings (asmay be understood with reference to the top-down view of FIG. 7, and thetop-down view of FIG. 9), and the slits 54 are trenches which extendalong the illustrated y-axis direction (as may be understood withreference to the top-down view of FIG. 9).

In some embodiments, the strips 16 and 18 may be considered to extendalong a first direction (the x-axis direction, as may be understood withreference to the top-down view of FIG. 5), and the slits 54 may beconsidered to extend along a second direction (the y-axis direction, asmay be understood with reference to the top-down view of FIG. 9). Thesecond direction crosses the first direction, and in the illustratedembodiment is substantially orthogonal to the first direction (with theterm “substantially orthogonal” meaning orthogonal to within reasonabletolerances of fabrication and measurement).

The slits 54 have sidewall surfaces 53 which extend along the materials38 and 40 of the stack 32. In the shown embodiment, the sidewallsurfaces 53 are substantially vertically straight. In other embodiments,the sidewall surfaces 53 may be tapered.

Referring to FIGS. 10-10B, protective material 56 is formed along thesidewall surfaces 53 of the slits 54 to line upper portions 55 of theslits 54 while leaving lower portions 57 of the slits exposed. Theexposed lower portions 57 are along the materials 24 and 26 of thestrips 16 and 18. In the illustrated embodiment, the protective material56 also extends across a top of the stack 32.

The protective material 56 may comprise any suitable composition(s). Insome embodiments, the protective material 56 may comprise, consistessentially of, or consist of silicon; and specifically may comprisesilicon which is effectively undoped (e.g., comprising only an intrinsicdopant concentration, and in some embodiments comprising a dopantconcentration of less than or equal to about 10¹⁶ atoms/cm³).

Referring to FIGS. 11-11C, the sacrificial material 26 of the strips 18(FIGS. 5, 5A and 10A) is selectively removed relative to the materials20, 22, 24, 30 and 56. Such forms first conduits (first voids) 58between the first and second layers 12 and 28, and along the strips 16.In the illustrated embodiment, the conduits 58 are extended through thecell materials along lower regions of the cell-material-pillars 44 toexpose sidewall surfaces 59 of the semiconductor material (channelmaterial) 46 of the channel-material-pillars 52.

In some embodiments, the sacrificial material 26 may comprise silicondioxide, and may be removed with a wet etch utilizing hydrofluoric acid.In some embodiments, the sacrificial material 26 may comprise siliconnitride, and may be removed with a wet etch utilizing phosphoric acid.

Referring to FIGS. 12-12C, replacement material 60 is formed within theconduits 58 (FIGS. 11-11C). The replacement material 60 may beconductively-doped semiconductor material, and may comprise a samesemiconductor material as the channel material 46. In some embodiments,the replacement material 60 may comprise, consist essentially of, orconsist of conductively-doped silicon. The replacement material 60 maybe a conductive material, and in some embodiments may be referred to asa first conductive material formed within a level 62 of the strips (withsuch level 62 being labeled in FIGS. 12A and 12B).

The conductive material 60 may be considered to be configured asconductive structures (conductive strips) 64, with such conductivestructures extending linearly along the x-axis direction. Although theconductive structures 64 are shown to be straight along the x-axisdirection, in other embodiments the structures 64 may be curved, wavy,etc.

In the illustrated embodiment, the replacement material 60 is formeddirectly against the sidewall surfaces 59 of the lower regions of thechannel-material-pillars 52.

The processing of FIGS. 11 and 12 may be considered to replace thesacrificial material 26 (FIG. 10A) with the replacement material 60. Insome embodiments, the processing of FIGS. 11 and 12 may be considered toreplace a first sacrificial material (26) with a first replacementmaterial (60).

Referring to FIGS. 13-13C, the sacrificial material 24 of the strips 16(FIGS. 5-5B and 12A-12C) is selectively removed relative to thematerials 20, 22, 30, 56 and 60. Such forms second conduits (secondvoids) 68 between the first and second layers 12 and 28, and along theconductive structures (strips) 64. In the illustrated embodiment, theconduits 68 are extended through the cell materials along lower regionsof the cell-material-pillars 44 to expose sidewall surfaces 59 of thesemiconductor material (channel material) 46 of thechannel-material-pillars 52.

In some embodiments, the sacrificial material 24 may comprise silicondioxide, and may be removed with a wet etch utilizing hydrofluoric acid.In some embodiments, the sacrificial material 24 may comprise siliconnitride, and may be removed with a wet etch utilizing phosphoric acid.

Referring to FIGS. 14-14C, replacement material 70 is formed within theconduits 68 (FIGS. 13-13C). The replacement material 70 may beconductively-doped semiconductor material, and may comprise a samesemiconductor material as the channel material 46. In some embodiments,the replacement material 70 may comprise, consist essentially of, orconsist of conductively-doped silicon. The replacement material 70 maybe a conductive material, and in some embodiments may be referred to asa second conductive material formed within the level 62.

The conductive material 70 may be considered to be configured asconductive structures (conductive strips) 74, with such conductivestructures extending linearly along the x-axis direction. Although theconductive structures 74 are shown to be straight along the x-axisdirection, in other embodiments the structures 74 may be curved, wavy,etc.

In the illustrated embodiment, the replacement material 70 is formeddirectly against the sidewall surfaces 59 of the lower regions of thechannel-material-pillars 52, as shown in FIGS. 14B and 14C.

The processing of FIGS. 13 and 14 may be considered to replace thesacrificial material 24 (FIGS. 12-12C) with the replacement material 70.In some embodiments, the processing of FIGS. 13 and 14 may be consideredto replace a second sacrificial material (24) with a second replacementmaterial (70).

FIG. 14C shows that the conductive structures 64 and 74 extend along theillustrated x-axis direction, and alternate with one another along theillustrated y-axis direction. Either the x-axis direction or the y-axisdirection may be referred to as a first horizontal direction (or a firstlateral direction), and the other may be referred to as a secondhorizontal direction (or a second lateral direction).

In some embodiments, the slits 54 may be considered to extend along afirst horizontal direction, and the conductive structures 64 and 74 maybe considered to extend along a second horizontal direction which issubstantially orthogonal to the first horizontal direction.

The conductive structures 64 and 74 join to one another along interfaces72 (labeled in FIG. 14C). Such interfaces may be detectable boundaryregions between the structures 64 and 74. In some embodiments, thestructures 64 and 74 may comprise different compositions relative to oneanother (i.e., the composition 60 may be different than the composition70). For instance, the compositions 60 and 70 may comprise a samesemiconductor material one another, but may comprise different levels ofdoping relative to one another. Alternatively, the compositions 60 and70 may comprise different semiconductor materials relative to oneanother. In some embodiments, the structures 64 and 74 may comprise asame composition as one another. For instance, the compositions 60 and70 may both comprise heavily-doped silicon. The heavily-doped siliconmay comprise, for example, one or more n-type dopants (e.g., one or moreof phosphorus, arsenic, etc.).

In embodiments in which the compositions 60 and 70 are the same as oneanother, the detectable boundaries 72 may correspond to detectable seamsbetween the compositions 60 and 70 which result from the compositions 60and 70 being formed sequentially relative to one another. The seams maybe regions where grain boundaries change in orientation, size, etc.;regions where voids or other minor defects occur; etc. In someembodiments, the compositions 60 and 70 may be referred to as first andsecond conductive materials, respectively, and such first and secondconductive materials may be substantially the same composition as oneanother. The term “substantially the same” means the same to withinreasonable tolerances of fabrication and measurement.

In some embodiments, the conductive structures 64 and 74 may beconsidered together to form a laminate 76. A region 78 of the laminate76 extends between the slits 54.

In some embodiments, the conductive structures 64 and 74 may beincorporated into a conductive source structure 80 of a memory device.The conductive source structure includes the conductive structures 64and 70, and the conductive expanse 20. The conductive source structure80 also includes the material 22 of the layer 12 in the illustratedembodiment of FIGS. 14A and 14B. In other embodiments, the layer 12 maybe omitted. Additionally, the conductive source structure 80 may includethe material 30 of the layer 28, if such material is conductive. Inother embodiments, the layer 28 may be omitted or may be insulative.

In the illustrated embodiment, the conductive materials 60 and 70 aredirectly against surfaces 59 of the channel-material-pillars 52. In someembodiments, the conductive materials 60 and 70 may compriseconductively-doped semiconductor material. Dopant may be out-diffusedfrom the materials 60 and 70 into the channel material (semiconductormaterial) 46 to form a heavily-doped lower portion of the semiconductormaterial 46. Upper boundaries of the heavily-doped lower portions of thesemiconductor material 46 may be along one of the levels 38, with suchupper boundaries being diagrammatically illustrated as locations 79within the cross-sectional views of FIGS. 14A and 14B. The out-diffusionfrom the doped materials 60 and 70 into the semiconductor material 46may be accomplished with any suitable processing, including, forexample, suitable thermal processing.

Referring to FIGS. 15-15B, the protective material 56 (FIGS. 14A-14B) isremoved. Also, the material 38 (FIGS. 14A and 14B) of the first levels34 is removed to leave voids 82 along the first levels 34. The material38 may be removed with one or more etchants flowed into the slits 54.For instance, in some embodiments the material 38 may comprise siliconnitride, and may be removed with phosphoric acid flowed into the slits54.

Referring to FIGS. 16-16B, dielectric-barrier material 84 and conductivematerial 86 are formed within the voids 82 (FIGS. 15A and 15B).

The dielectric-barrier material 84 may comprise any suitablecomposition(s), and in some embodiments may comprise one or more high-kmaterials. The term “high-k” means a dielectric constant greater thanthat of silicon dioxide (i.e., greater than about 3.9). Example high-kmaterials include aluminum oxide, hafnium oxide, zirconium oxide, etc.

The conductive material 86 may comprise any suitable composition(s); andin some embodiments may comprise a tungsten core at least partiallysurrounded by titanium nitride. The conductive material 86 may bereferred to as a third conductive material to distinguish it from thefirst and second conductive materials 60 and 70 formed with theprocessing of FIGS. 11-14.

In some embodiments, the conductive material 86 may be considered to atleast partially fill the voids 82 (FIGS. 15A and 15B). In someembodiments, the conductive material 86 may be considered to replace atleast some of the sacrificial material 38 (FIGS. 14A and 14B).

The stack 32 of FIGS. 16-16B may be considered to comprise conductivefirst levels 34 which alternate with insulative second levels 36 along avertical direction (an illustrated z-axis direction). In the illustratedembodiment, some regions of the dielectric-barrier material 84 may beconsidered to be associated with the levels 36 and other regions may beconsidered to be associated with the levels 34. Alternatively, theentirety of the dielectric-barrier material 84 may be considered to beassociated with the conductive levels 34, even though the material 84 isnot itself conductive.

After the materials 84 and 86 are formed within the voids 82, the slits54 may be filled with one or more materials to form panels 88 within theslits. In the illustrated embodiment, the panels 88 comprise insulativematerial 90. The insulative material 90 may comprise any suitablecomposition(s), and in some embodiments may comprise, consistessentially of, or consist of silicon dioxide. Although the panels 88are shown to comprise a single homogeneous material, in otherembodiments the panels may comprise laminates of two or more differentmaterials. For instance, the panels 88 may comprise a conductivematerial (e.g., conductively-doped silicon) laterally sandwiched betweena pair of insulative materials (e.g., materials comprising silicondioxide).

The assembly 10 of FIGS. 16-16B may be considered to be configured as amemory device comprising memory cells 92 and select devices (e.g.,source-side select devices, SGS devices) 94. A lowermost of theconductive levels 34 is labeled 34 a, and the tops 79 of the dopedregions formed by out-diffusion into the lower portions of thechannel-material-pillars (described above with reference to FIG. 14-14B)extends to the conductive level 34 a. The conductive level 34 acomprises the SGS devices 94. In the shown embodiment, the dopant withinthe channel material 46 extends partially across the level 34 a toachieve the desired balance between non-leaky “OFF” characteristics forthe SGS devices and leaky GIDL characteristics for the SGS devices.Although only one of the conductive levels 34 is shown to beincorporated into the source-side select devices, in other embodimentsmultiple conductive levels may be incorporated into the source-sideselect devices. The conductive levels may be electrically coupled withone another (ganged together) to be together incorporated intolong-channel source-side select devices. If multiple of the conductivelevels are incorporated into the source-side select devices, theout-diffused dopant may extend upwardly across two or more of theconductive levels 34 which are incorporated into the source-side selectdevices.

The memory cells 92 (e.g., NAND memory cells) are vertically stacked oneatop another. The memory cells 92 are along the first levels (conductivelevels) 34. Each of the memory cells comprises a region of thesemiconductor material (channel material) 46, and comprises regions(control gate regions) of the conductive levels 34. The regions of theconductive levels which are not comprised by the memory cells 92 may beconsidered to be wordline regions (or routing regions) which couple thecontrol gate regions with driver circuitry and/or with other suitablecircuitry. The memory cells 92 also comprise the cell materials (e.g.,the tunneling material, charge-storage material, and charge-blockingmaterial) within the regions 50.

In some embodiments, the conductive levels 34 associated with the memorycells 92 may be referred to as wordline/control gate levels (or memorycell levels), in that they include wordlines and control gatesassociated with vertically-stacked memory cells of NAND strings. TheNAND strings may comprise any suitable number of the memory cell levels.For instance, the NAND strings may have 8 of the memory cell levels, 16of the memory cell levels, 32 of the memory cell levels, 64 of thememory cell levels, 512 of the memory cell levels, 1024 of the memorycell levels, etc.

The conductive materials 20, 60 and 70 together form the sourcestructure 80 of a memory device. Such source structure may furtherinclude one or both of the layers 12 and 28. The source structure may beanalogous to the source structures 216 described in the “Background”section. The source structure is shown to be coupled with controlcircuitry (e.g., CMOS). The control circuitry may be under the sourcestructure 80 (e.g., may be associated with the base described above withreference to FIG. 5) or may be in any other suitable location.

In some embodiments, the channel-material-pillars 52 may be consideredto be representative of a large number of substantially identicalchannel-material-pillars extending across the memory device 10; with theterm “substantially identical” meaning identical to within reasonabletolerances of fabrication and measurement. The top-down view of FIG. 16shows the pillars 56 arranged within a matrix (with the pillars 56 beinghexagonally-packed in the illustrated embodiment), and shows the slits54 extending along outer edges of the matrix of thechannel-material-pillars. In some embodiments, the slits 54 may define ablock region (memory-block-region) 96, with such block region beingbetween the panels 88. Accordingly, the memory cells 92 may beconsidered to be within the block region 96 defined by the slits 54. Theblock region 96 may be analogous to the blocks (or sub-blocks) describedabove in the “Background” section of this disclosure.

FIG. 16A shows an embodiment in which the conductive structures 64 and74 have about the same lateral widths as one another. In otherembodiments, the structures 64 and 74 may have different lateral widthsrelative to one another. For instance, the structures 64 and 74 may begenerated utilizing the assembly described above with reference to FIG.5A-1, rather than the assembly of FIG. 5A. FIG. 16A-1 shows an assembly10 analogous that of FIG. 16A, but in which the structures 64 and 74have different lateral widths relative to one another. The assembly ofFIG. 16A-1 may be formed by utilizing the assembly of FIG. 5A-1 in placeof the assembly of FIG. 5A for the processing described herein.

An advantage of the processing described herein is that the weight ofthe stack 32 is well-supported during the fabrication of the laminatestructure 76 (i.e., the laminate of the conductive structures 64 and74). Specifically, since the sacrificial structures 16 and 18 (FIG. 5A)are replaced one-at-a-time to form the laminate structure 76, the stack32 has substantial support during the entire process of forming thelaminate structure 76. Conventional processes may form a homogeneousmaterial analogous to the laminate structure, with such homogeneousmaterial being formed in a single fabrication step. A difficultyencountered with such conventional processes is that the stack 32 may besupported only by the cell-material-pillars 44 at one or more stages ofthe processes, and such may not be sufficient to avoid buckling, bendingand/or even collapsing of regions of the stack 32.

Although the embodiments described herein utilize sequential replacementof two different sacrificial materials (24 and 26) to form a laminatestructure 76 having two different conductive structures (64 and 74) inan alternating (repeating) arrangement, it is to be understood that inother embodiments more than two different sacrificial materials may besequentially replaced. The laminate structure (analogous to thestructure 76) formed with such other embodiments may comprise twodifferent conductive structures in an alternating (repeating)arrangement, or may comprise more than two different conductivestructures in an arrangement (e.g., a repeating arrangement).

The assemblies and structures discussed above may be utilized withinintegrated circuits (with the term “integrated circuit” meaning anelectronic circuit supported by a semiconductor substrate); and may beincorporated into electronic systems. Such electronic systems may beused in, for example, memory modules, device drivers, power modules,communication modems, processor modules, and application-specificmodules, and may include multilayer, multichip modules. The electronicsystems may be any of a broad range of systems, such as, for example,cameras, wireless devices, displays, chip sets, set top boxes, games,lighting, vehicles, clocks, televisions, cell phones, personalcomputers, automobiles, industrial control systems, aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

The terms “dielectric” and “insulative” may be utilized to describematerials having insulative electrical properties. The terms areconsidered synonymous in this disclosure. The utilization of the term“dielectric” in some instances, and the term “insulative” (or“electrically insulative”) in other instances, may be to providelanguage variation within this disclosure to simplify antecedent basiswithin the claims that follow, and is not utilized to indicate anysignificant chemical or electrical differences.

The terms “electrically connected” and “electrically coupled” may bothbe utilized in this disclosure. The terms are considered synonymous. Theutilization of one term in some instances and the other in otherinstances may be to provide language variation within this disclosure tosimplify antecedent basis within the claims that follow.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. Thedescriptions provided herein, and the claims that follow, pertain to anystructures that have the described relationships between variousfeatures, regardless of whether the structures are in the particularorientation of the drawings, or are rotated relative to suchorientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections, unless indicatedotherwise, in order to simplify the drawings.

When a structure is referred to above as being “on”, “adjacent” or“against” another structure, it can be directly on the other structureor intervening structures may also be present. In contrast, when astructure is referred to as being “directly on”, “directly adjacent” or“directly against” another structure, there are no interveningstructures present. The terms “directly under”, “directly over”, etc.,do not indicate direct physical contact (unless expressly statedotherwise), but instead indicate upright alignment.

Structures (e.g., layers, materials, etc.) may be referred to as“extending vertically” to indicate that the structures generally extendupwardly from an underlying base (e.g., substrate). Thevertically-extending structures may extend substantially orthogonallyrelative to an upper surface of the base, or not.

Some embodiments include a method of forming an integrated assembly.Alternating strips of first and second sacrificial materials are formedover a conductive structure. A stack of alternating first levels andinsulative second levels is formed over the alternating strips. Thefirst levels include first material and the second levels includeinsulative second material. Cell-material-openings are formed to extendthrough the stack and through at least some of the strips.Cell-material-pillars are formed within the cell-material-openings.Slits are formed to extend through the stack and through the strips. Thestrips extend along a first direction, and the slits extend along asecond direction that crosses the first direction. The first sacrificialmaterial is replaced with first conductive material and then the secondsacrificial material is replaced with second conductive material. Atleast some of the first material of the stack is replaced with thirdconductive material to thereby form the stack to have conductive firstlevels alternating with the insulative second levels.

Some embodiments include an integrated assembly having a conductiveexpanse, and having alternating first and second strips over theconductive expanse. The first and second strips extend along a firstdirection. Interfaces between the first and second strips are detectableboundary regions. A stack having conductive first levels alternatingwith insulative second levels is over the strips. Cell-material-pillarsextend through the stack and through the strips to the conductiveexpanse. Memory cells are along the conductive first levels and includeregions of the cell-material-pillars.

Some embodiments include an integrated assembly having amemory-block-region between a pair of panels. The panels extend along afirst direction. A conductive expanse is under the panels and directlyagainst lower regions of the panels. A laminate is over the conductiveexpanse and between the panels. The laminate comprises alternating firstand second structures. The first and second structures extend along asecond direction which is substantially orthogonal to the firstdirection. Interfaces between the first and second structures aredetectable boundary regions. A stack is over the laminate and comprisesconductive first levels alternating with insulative second levels.Cell-material-pillars extend through the stack and through the laminateto the conductive expanse. Memory cells are along the conductive firstlevels and comprise regions of the cell-material-pillars.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

We claim:
 1. A method of forming an integrated assembly, comprising:forming laterally alternating first and second strips over a conductivestructure, the first strips comprising first sacrificial material andthe second strips comprising second sacrificial material; forming astack of vertically alternating first levels and insulative secondlevels over the strips; the first levels comprising first material andthe insulative second levels comprising insulative second material;forming openings to extend through the stack and through at least someof the strips; forming cell-material-pillars within the openings;forming slits to extend through the stack and through the strips; thestrips extending along a first direction, and the slits extending alonga second direction that crosses the first direction; replacing the firstsacrificial material with first conductive material and then replacingthe second sacrificial material with second conductive material; andreplacing at least some of the first material of the stack with thirdconductive material to thereby form the stack to comprise conductivefirst levels vertically alternating with the insulative second levels.2. The method of claim 1 wherein one of the first and second sacrificialmaterials comprises silicon nitride and the other comprises silicondioxide.
 3. The method of claim 1 wherein the first and second stripsare about a same lateral thickness as one another.
 4. The method ofclaim 1 wherein the first and second strips are different lateralthicknesses relative to one another.
 5. The method of claim 1 furthercomprising forming insulative panels within the slits.
 6. The method ofclaim 1 wherein the first and second conductive materials compriseconductively-doped semiconductor material.
 7. The method of claim 1wherein the first and second conductive materials compriseconductively-doped silicon.
 8. The method of claim 1 wherein the firstand second conductive materials comprise silicon doped with one or moren-type dopants.
 9. The method of claim 1 wherein the first and secondconductive materials are of different compositions relative to oneanother.
 10. The method of claim 1 wherein the first and secondconductive materials are of substantially the same composition as oneanother and join to one another along seams.
 11. The method of claim 1further comprising forming a first layer over the conductive structureprior to forming the alternating strips, and forming a second layer overthe alternating strips prior to forming the stack.
 12. The method ofclaim 11 wherein at least one of the first and second layers comprisesheavily-doped semiconductor material.
 13. The method of claim 11 whereinthe first layer is electrically conductive, and wherein the second layeris electrically insulative.
 14. The method of claim 1 wherein thecell-material-pillars include channel-material-pillars; wherein thefirst and second conductive materials comprise heavily-dopedsemiconductor material and are formed to be directly against thechannel-material-pillars; and further comprising out-diffusing dopantfrom the heavily-doped semiconductor material into thechannel-material-pillars, the out-diffused dopant extending upwardly toat least one of the first levels of the stack.
 15. The method of claim14 further comprising forming source-select devices to comprise said atleast one of the first levels.
 16. The method of claim 1 furthercomprising forming memory cells along the conductive first levels, withthe memory cells comprising regions of the cell-material-pillars;wherein the integrated assembly includes a memory device which comprisesthe memory cells; and wherein the first and second conductive materialsand the conductive structure together form at least a portion of asource structure of the memory device.
 17. An integrated assembly,comprising: a conductive expanse; alternating first and secondstructures over the conductive expanse; the first and second structuresextending along a first horizontal direction and alternating with oneanother along a second horizontal direction; interfaces between thefirst and second structures being detectable boundary regions; a stackover the alternating structures and comprising conductive first levelsalternating with insulative second levels along a vertical direction;cell-material-pillars extending through the stack and through thestructures to the conductive expanse; and memory cells along theconductive first levels and comprising regions of thecell-material-pillars.
 18. The integrated assembly of claim 17 whereinthe first and second structures are about a same lateral thickness asone another.
 19. The integrated assembly of claim 17 wherein the firstand second structures are different lateral thicknesses relative to oneanother.
 20. The integrated assembly of claim 17 wherein the first andsecond structures comprise first and second conductive materials,respectively; and wherein the first and second conductive materials aresubstantially the same composition as one another.
 21. The integratedassembly of claim 20 wherein the detectable boundary regions are seamsalong the interfaces between the first and second conductive materials.22. The integrated assembly of claim 17 wherein the first and secondstructures comprise first and second conductive materials, respectively;and wherein the first and second conductive materials are differentcompositions relative to one another.
 23. The integrated assembly ofclaim 17 wherein the first and second structures comprise first andsecond doped semiconductor materials, respectively.
 24. The integratedassembly of claim 23 wherein the first and second doped semiconductormaterials comprise doped silicon.
 25. The integrated assembly of claim23 wherein the cell-material-pillars comprise channel-material-pillarsand comprise tunneling material, charge-trapping material andcharge-blocking material laterally outward of thechannel-material-pillars; and wherein the first and second dopedsemiconductor materials directly contact the channel-material-pillars.26. The integrated assembly of claim 17 comprising: a first layer overthe conductive expanse and under the structures; and a second layer overthe structures and under the stack.
 27. The integrated assembly of claim26 wherein the first and second layers are a same composition as oneanother.
 28. The integrated assembly of claim 26 wherein the first andsecond layers are different compositions relative to one another. 29.The integrated assembly of claim 26 wherein the first and second layersare both electrically conductive.
 30. The integrated assembly of claim26 wherein the first layer is electrically conductive, and wherein thesecond layer is electrically insulative.
 31. An integrated assembly,comprising: a memory-block-region between a pair of panels, the panelsextending along a first horizontal direction; a conductive expanse underthe panels and directly against lower regions of the panels; a laminateover the conductive expanse and between the panels; the laminatecomprising first structures alternating with second structures along alateral direction; the first and second structures extending along asecond horizontal direction which is substantially orthogonal to thefirst horizontal direction; interfaces between the first and secondstructures being detectable boundary regions; a stack over the laminateand comprising conductive first levels alternating with insulativesecond levels along a vertical direction; cell-material-pillarsextending through the stack and through the laminate to the conductiveexpanse; and memory cells along the conductive first levels andcomprising regions of the cell-material-pillars.
 32. The integratedassembly of claim 31 wherein the panels comprise insulative material.33. The integrated assembly of claim 32 wherein the panels and thesecond insulative levels comprise a same composition as one another. 34.The integrated assembly of claim 33 wherein said same compositioncomprises silicon dioxide.
 35. The integrated assembly of claim 31wherein the first and second structures comprise first and secondconductive materials, respectively; and wherein the first and secondconductive materials are substantially the same composition as oneanother.
 36. The integrated assembly of claim 35 wherein the detectableboundary regions are seams along the interfaces between the first andsecond conductive materials.
 37. The integrated assembly of claim 31wherein the first and second structures comprise first and secondconductive materials, respectively; and wherein the first and secondconductive materials are different compositions relative to one another.38. The integrated assembly of claim 31 wherein the first and secondstructures comprise first and second doped semiconductor materials,respectively.
 39. The integrated assembly of claim 31 comprising a layerbetween the conductive expanse and the laminate.
 40. The integratedassembly of claim 39 wherein the layer is electrically conductive. 41.The integrated assembly of claim 31 comprising a layer between thelaminate and the stack.
 42. The integrated assembly of claim 41 whereinthe layer is electrically conductive.
 43. The integrated assembly ofclaim 41 wherein the layer is electrically insulative.